Europium Silicide – a Prospective Material for Contacts with Silicon
نویسندگان
چکیده
Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at the interface: premier contacts entail epitaxial integration of metal silicides with Si. Here we present epitaxially grown EuSi2/Si junction characterized by RHEED, XRD, transmission electron microscopy, magnetization and transport measurements. Structural perfection leads to superb conductivity and a record-low Schottky barrier with n-Si while an antiferromagnetic phase invites spin-related applications. This development opens brand-new opportunities in electronics.
منابع مشابه
Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements
We examine nickel silicide as a viable ohmic contact metallization for low-temperature, low-magnetic-field transport measurements of atomic-scale devices in silicon. In particular, we compare a nickel silicide metallization with aluminium, a common ohmic contact for silicon devices. Nickel silicide can be formed at the low temperatures (<400°C) required for maintaining atomic precision placemen...
متن کاملInterface Engineering to Create a Strong Spin Filter Contact to Silicon
Integrating epitaxial and ferromagnetic Europium Oxide (EuO) directly on silicon is a perfect route to enrich silicon nanotechnology with spin filter functionality. To date, the inherent chemical reactivity between EuO and Si has prevented a heteroepitaxial integration without significant contaminations of the interface with Eu silicides and Si oxides. We present a solution to this long-standin...
متن کاملDynamic observation on the growth behaviors in manganese silicide/silicon nanowire heterostructures.
Metal silicide nanowires (NWs) are very interesting materials with diverse physical properties. Among the silicides, manganese silicide nanostructures have attracted wide attention due to their several potential applications, including in microelectronics, optoelectronics, spintronics and thermoelectric devices. In this work, we exhibited the formation of pure manganese silicide and manganese s...
متن کاملOhmic Contacts for High Temperature Integrated Circuits in Silicon Carbide
in English ..........................................................................................................................................I Svensk sammanfattning ............................................................................................................................... II Acknowledgement ................................................................................
متن کاملFormation of Metal-Semiconductor Axial Nanowire Heterostructures through Controlled Silicidation Undergraduate Researcher
Semiconductor nanowires show promise for application in nanoscale electronics, but the difficulty of forming low-resistance ohmic contacts provides a challenge to their implementation. To improve the electrical performance of lithographically defined nickel contacts, nickel-silicide/ silicon axial nanowire heterostructures were formed by controlled partial silicidation. Prior to annealing, two-...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره 6 شماره
صفحات -
تاریخ انتشار 2016