Europium Silicide – a Prospective Material for Contacts with Silicon

نویسندگان

  • Dmitry V. Averyanov
  • Andrey M. Tokmachev
  • Christina G. Karateeva
  • Igor A. Karateev
  • Eduard F. Lobanovich
  • Grigory V. Prutskov
  • Oleg E. Parfenov
  • Alexander N. Taldenkov
  • Alexander L. Vasiliev
  • Vyacheslav G. Storchak
چکیده

Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at the interface: premier contacts entail epitaxial integration of metal silicides with Si. Here we present epitaxially grown EuSi2/Si junction characterized by RHEED, XRD, transmission electron microscopy, magnetization and transport measurements. Structural perfection leads to superb conductivity and a record-low Schottky barrier with n-Si while an antiferromagnetic phase invites spin-related applications. This development opens brand-new opportunities in electronics.

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عنوان ژورنال:

دوره 6  شماره 

صفحات  -

تاریخ انتشار 2016